Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
نویسندگان
چکیده
منابع مشابه
Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers
Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2003
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1629803